GAAS/GA0.65AL0.35AS DBR SURFACE EMITTING LASERS GROWN BY OMVPE

被引：6

作者：

IBARAKI, A

KAWASHIMA, K

FURUSAWA, K

ISHIKAWA, T

YAMAGUCHI, T

NIINA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90623-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：809 / 813

页数：5

共 7 条

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IGA, K ;

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[2] LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :663-668

[4] CIRCULAR BURIED HETEROSTRUCTURE (CBH) GAALAS/GAAS SURFACE EMITTING LASERS [J].

KINOSHITA, S ;

IGA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :882-888

[5]

NOMURA Y, 1985, 17TH P C SOL STAT DE, P71

[6] GAINASP-INP SURFACE EMITTING INJECTION-LASERS WITH SHORT CAVITY LENGTH [J].

SODA, H ;

MOTEGI, Y ;

IGA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1035-1041

[7] 2-DIMENSIONAL ARRAY OF GAINASP-INP SURFACE-EMITTING LASERS [J].

UCHIYAMA, S ;

IGA, K .

ELECTRONICS LETTERS, 1985, 21 (04) :162-164

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