AR AND EXCESS N INCORPORATION IN EPITAXIAL TIN FILMS GROWN BY REACTIVE BIAS SPUTTERING IN MIXED AR/N-2 AND PURE N-2 DISCHARGES

被引：62

作者：

HULTMAN, L

SUNDGREN, JE

MARKERT, LC

GREENE, JE

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576251

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1187 / 1193

页数：7

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