ASYMMETRY IN THE SIO2 TUNNELING BARRIERS TO ELECTRONS AND HOLES

被引：82

作者：

NG, KK ^{[1
]}

CARD, HC ^{[1
]}

机构：

[1] COLUMBIA UNIV,RADIAT LAB,NEW YORK,NY 10027

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.327888

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2153 / 2157

页数：5

共 24 条

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J].

ANDERSON, RL .

APPLIED PHYSICS LETTERS, 1975, 27 (12) :691-693

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[3] DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :881-883

[4] POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2 [J].

CARD, HC .

SOLID STATE COMMUNICATIONS, 1974, 14 (10) :1011-1014

[5] TUNNELING IN ULTRATHIN SIO2 LAYERS ON SILICON - COMMENTS ON DISPERSION-RELATIONS FOR ELECTRONS AND HOLES [J].

CARD, HC ;

NG, KK .

SOLID STATE COMMUNICATIONS, 1979, 31 (11) :877-879

[6] PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :971-976

[7]

CARD HC, UNPUBLISHED

[8] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J].

CLARKE, RA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1971, 14 (10) :957-&

[9] BND EDGE OF AMORPHOUS SIO2 BY PHOTOINJECTION AND PHOTOCONDUCTIVITY MEASUREMENTS [J].

DISTEFANO, TH ;

EASTMAN, DE .

SOLID STATE COMMUNICATIONS, 1971, 9 (24) :2259-+

[10]

DRESSENDORFER PV, 1978, THESIS YALE U

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