PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE

被引：22

作者：

INADA, T

TOKUNAGA, K

TAKA, S

机构：

[1] College of Engineering, Hosei University, Kogenei, Tokyo 184, Kajino-cho

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm2, independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2-3×1019/cm3, which is difficult to realize by conventional thermal annealing.

引用

页码：546 / 548

页数：3

共 21 条

[11]

INADA T, UNPUBLISHED

[12]

KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[13] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J].