IN-SITU OBSERVATION OF THE GROWING SURFACE OF YBA2CU3O7-DELTA FILMS BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION BEAM EXCITED AES

Reflection high-energy electron diffraction excited Anger electron spectroscopy was applied for in situ observation of the growing surface of YBa2Cu3O7-delta films during deposition by the molecular beam epitaxy method. A compact electron analyzer assembly was built to enable the measurement without disturbing the deposition. The measurements gave results which support two-dimensional nucleation growth from the first unit cell on the substrate during coevaporation. The possibility of atomic layer-by-layer growth in the sequential deposition of YBa2Cu3O7-delta was also investigated.