INFRARED-SPECTROSCOPY OF THIN SILICON DIOXIDE ON SILICON

被引：89

作者：

OLSEN, JE

SHIMURA, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 20期

关键词：

D O I：

10.1063/1.100487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1934 / 1936

页数：3

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共 25 条

[21] PROPERTIES OF SIO2 ON SI AFTER EXPOSURE TO 3-1H2+N2 AND NH3 [J].

RUGGLES, GA ;

KOBA, R ;

TRESSLER, RE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) :2549-2554

[22] CARBON ENHANCEMENT EFFECT ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON [J].

SHIMURA, F .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3251-3254

[23] INFRARED-ABSORPTION STUDY ON CARBON AND OXYGEN BEHAVIOR IN CZOCHRALSKI SILICON-CRYSTALS [J].

SHIMURA, F ;

BAIARDO, JP ;

FRAUNDORF, P .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :941-943

[24]

TAFT EA, 1987, J ELECTROCHEM SOC, V127, P475

[25] KINETICS OF THE THERMAL-OXIDATION OF SILICON .2. SOME THEORETICAL EVALUATIONS [J].

TILLER, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :625-632