共 16 条
- [1] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +
- [2] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
- [4] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1847 - &
- [5] HIGH-STRESS OPTICAL BIREFRINGENCE IN PURE AND DEGENERATE N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1966, 150 (02): : 748 - &
- [6] LARGE-STRAIN DEPENDENCE OF ACCEPTOR BINDING ENERGY IN GERMANIUM [J]. PHYSICAL REVIEW, 1962, 128 (01): : 68 - &
- [7] EFFECTS OF UNIAXIAL STRESS ON ELECTRICAL RESISTIVITY AND GUNN EFFECT IN N-TYPE GAAS [J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1660 - &
- [8] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032
- [9] STRESS DEPENDENCE OF PIEZORESISTANCE EFFECT [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 2050 - &
- [10] UNIAXIAL STRESS INVESTIGATIONS OF 3-LEVEL CONDUCTION-BAND STRUCTURE OF GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (16): : 3115 - 3126