HETEROSTRUCTURES IN MODFETS

被引：12

作者：

FRITZSCHE, D

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 11期

关键词：

D O I：

10.1016/0038-1101(87)90085-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1183 / 1195

页数：13

共 52 条

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MIZUTANI, T ;

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CHIU, LC ;

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[5] SELF-ALIGNED MODULATION-DOPED (AL,GA)AS/GAAS FIELD-EFFECT TRANSISTORS [J].

CIRILLO, NC ;

ABROKWAH, JK ;

SHUR, MS .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) :129-131

[6] REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE [J].

CIRILLO, NC ;

SHUR, MS ;

VOLD, PJ ;

ABROKWAH, JK ;

TUFTE, ON .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :645-647

[7] INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES [J].

CIRILLO, NC ;

SHUR, MS ;

ABROKWAH, JK .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :71-74

[8] ULTRA-HIGH-SPEED RING OSCILLATORS BASED ON SELF-ALIGNED-GATE MODULATION-DOPED N+-(AL,GA)AS/GAAS FETS [J].

CIRILLO, NC ;

ABROKWAH, JK ;

FRAASCH, AM ;

VOLD, PJ .

ELECTRONICS LETTERS, 1985, 21 (17) :772-773

[9] OPTIMIZATION OF MODULATION-DOPED HETEROSTRUCTURES FOR TEGFET OPERATION AT ROOM-TEMPERATURE [J].

DAMBKES, H ;

BROCKERHOFF, W ;

HEIME, K ;

PLOOG, K ;

WEIMANN, G ;

SCHLAPP, W .

ELECTRONICS LETTERS, 1984, 20 (15) :615-618

[10]

DAMBKES H, 1986, IEEE T ELECTRON DEV, V33, P633

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