NUMERICAL SMALL-SIGNAL AC MODELING OF DEEP-LEVEL-TRAP RELATED FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE AND CAPACITANCE FOR GAAS-MESFETS ON SEMI-INSULATING SUBSTRATES

被引：27

作者：

LI, QM

DUTTON, RW

机构：

[1] Department of Electrical Engineering, Stanford University, Stanford, CA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/16.81618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional numerical deep-level-trap model suitable for small-signal ac analysis is described. The model reproduced the experimentally observed frequency-dependent output conductance for a GaAs MESFET on a semi-insulating substrate, clarified the relations between the frequency characteristics and trap parameters, and identified two trap levels with proper energy separation supported by DLTS measurement. The model also predicted some frequency-dependent output capacitance contributed by the two trap levels.

引用

页码：1285 / 1288

页数：4

共 11 条

[1] 2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS [J].