DEFECT STRUCTURES IN LASER-FUSED SI-SIO2 WAFERS

[1] Beek W. J., 1975, TRANSPORT PHENOMENA

[2] HAISMA J, 1983, E M R S C REPORT, V12, P393

[3] JASTRZEBSKI L, 1983, RCA REV, V44, P250

[4] SOI BY CVD - EPITAXIAL LATERAL OVERGROWTH (ELO) PROCESS - REVIEW [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 493 - 526

[5] SILICON-ON-INSULATOR BY OXYGEN ION-IMPLANTATION [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 554 - 558

[6] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 78 - 80

[7] POATE JM, 1983, LASER ANNEALING SEMI

[8] SILICON-TO-SILICON DIRECT BONDING METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2987 - 2989

[9] WIDDERSHOVEN FP, UNPUB

[10] WIDDERSHOVEN FP, 1987, E MRS C P, V15, P643

[1] Beek W. J., 1975, TRANSPORT PHENOMENA

[2] HAISMA J, 1983, E M R S C REPORT, V12, P393

[3] JASTRZEBSKI L, 1983, RCA REV, V44, P250

[4] SOI BY CVD - EPITAXIAL LATERAL OVERGROWTH (ELO) PROCESS - REVIEW [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 493 - 526

[5] SILICON-ON-INSULATOR BY OXYGEN ION-IMPLANTATION [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 554 - 558

[6] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 78 - 80

[7] POATE JM, 1983, LASER ANNEALING SEMI

[8] SILICON-TO-SILICON DIRECT BONDING METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2987 - 2989

[9] WIDDERSHOVEN FP, UNPUB

[10] WIDDERSHOVEN FP, 1987, E MRS C P, V15, P643