OPTICAL DEPTH PROFILING OF ION-BEAM ETCHING INDUCED DAMAGE IN INGAAS/INP HETEROSTRUCTURES

被引：8

作者：

GERMANN, R ^{[1
]}

FORCHEL, A ^{[1
]}

GRUTZMACHER, D ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-5100 AACHEN,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 21期

关键词：

D O I：

10.1063/1.102059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2196 / 2198

页数：3

共 8 条

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[2]

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[3]

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[7] INVESTIGATION OF REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS-ALGAAS QUANTUM WELL STRUCTURES [J].

WONG, HF ;

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LISHAN, DG ;

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[8] CHARACTERIZATION OF ION-BEAM ETCHING INDUCED DEFECTS IN GAAS [J].

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