QUANTITATIVE COMPARISON OF SOLID-STATE MICROWAVE DETECTORS

[21] Torrey H., 1948, CRYSTAL RECTIFIERS, V15

[22] UHLIR A, 1963, MICROWAVE J, V6, P59

[23] LOW FREQUENCY NOISE SUPPRESSION IN SPACE CHARGE LIMITED SOLID STATE DIODES [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 123 - +

[24] VANDERZIEL A, 1958, P IRE, V46, P589

[25] WEBB PW, 1962, J BRIT IRE, V23, P111

[26] TRANSIT TIME EFFECTS IN SPACE-CHARGE-LIMITED SILICON MICROWAVE DIODE [J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 1 - &

[27] MECHANISMS OF SPACE-CHARGE-LIMITED CURRENT IN SOLIDS [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 165 - 189

[28] EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) : 1281 - 1287

[29] MILLIMETER FREQUENCY CONVERSION USING AU-N-TYPE GAAS SCHOTTKY BARRIER EPITAXIAL DIODES WITH A NOVEL CONTACTING TECHNIQUE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2130 - &

[21] Torrey H., 1948, CRYSTAL RECTIFIERS, V15

[22] UHLIR A, 1963, MICROWAVE J, V6, P59

[23] LOW FREQUENCY NOISE SUPPRESSION IN SPACE CHARGE LIMITED SOLID STATE DIODES [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 123 - +

[24] VANDERZIEL A, 1958, P IRE, V46, P589

[25] WEBB PW, 1962, J BRIT IRE, V23, P111

[26] TRANSIT TIME EFFECTS IN SPACE-CHARGE-LIMITED SILICON MICROWAVE DIODE [J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 1 - &

[27] MECHANISMS OF SPACE-CHARGE-LIMITED CURRENT IN SOLIDS [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 165 - 189

[28] EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) : 1281 - 1287

[29] MILLIMETER FREQUENCY CONVERSION USING AU-N-TYPE GAAS SCHOTTKY BARRIER EPITAXIAL DIODES WITH A NOVEL CONTACTING TECHNIQUE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2130 - &