NEW RADIATIVE DEEP STATES IN EPITAXIAL GA1-XALXAS

被引：8

作者：

BHATTACHARYA, PK ^{[1
]}

OWEN, SJT ^{[1
]}

MARRS, J ^{[1
]}

机构：

[1] TEKTRONIX INC,BEAVERTON,OR 97005

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.91617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：664 / 666

页数：3

共 21 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[3]

BHATTACHARYA PK, 1979, 7TH P INT S GALL ARS, P199

[4]

BHATTACHARYA PK, 1978, THESIS U SHEFFIELD

[5] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].

CASEY, HC ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&

[6]

DINGLE R, 1977, 6TH P INT S GAAS REL, P210

[7] STUDIES OF PHOTOLUMINESCENCE IN GAAS1-XPX MIXED CRYSTALS [J].

GAJ, JA ;

MAJERFELD, A ;

PEARSON, GL .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 48 (02) :513-+

[8] EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS [J].

HASEGAWA, F ;

MAJERFELD, A .

ELECTRONICS LETTERS, 1976, 12 (02) :52-53

[9] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[10]

LANG DV, 1976, 13TH P INT C PHYS SE, P615

← 1 2 3 →