HIGH-VOLTAGE CONDUCTIVITY-MODULATED SILICON RECTIFIER

被引:20
作者
VELORIC, HS
PRINCE, MB
机构
来源
BELL SYSTEM TECHNICAL JOURNAL | 1957年 / 36卷 / 04期
关键词
D O I
10.1002/j.1538-7305.1957.tb01498.x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:975 / 1004
页数:30
相关论文
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[1]  
BACKENSTOSS G, UNPUB
[2]   IMPURITY CENTERS IN GE AND SI [J].
BURTON, JA .
PHYSICA, 1954, 20 (10) :845-854
[3]  
FROSCH CJ, UNPUB J ELEC CHEM SO
[4]   DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553
[5]   SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN [J].
GARRETT, CGB ;
BRATTAIN, WH .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) :299-306
[6]   POWER RECTIFIERS AND TRANSISTORS [J].
HALL, RN .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518
[7]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884
[8]   AVALANCHE BREAKDOWN IN GERMANIUM [J].
MILLER, SL .
PHYSICAL REVIEW, 1955, 99 (04) :1234-1241
[9]   IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J].
MILLER, SL .
PHYSICAL REVIEW, 1957, 105 (04) :1246-1249
[10]   REVERSE CURRENT AND CARRIER LIFETIME AS A FUNCTION OF TEMPERATURE IN SILICON JUNCTION DIODES [J].
PELL, EM ;
ROE, GM .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (07) :768-772