INCREASE IN PHOTOCONDUCTIVITY OF POLYCRYSTALLINE SILICON BY PLASMA ANNEALING

被引：14

作者：

MAKINO, T ^{[1
]}

NAKAMURA, H ^{[1
]}

NAKASHITA, T ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIROSHIMA 730,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.327549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5868 / 5871

页数：4

共 18 条

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[8] CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J].

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[9]

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