HETEROEPITAXIAL GROWTH OF ZNSE ON (100) SI BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引:5
作者
LEE, MK
YEH, MY
CHANG, CC
机构
关键词
D O I
10.1063/1.102185
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1850 / 1852
页数:3
相关论文
共 16 条
[1]   METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE USING DIETHYLZINC AND DIETHYLSELENIDE [J].
ANDO, H ;
TAIKE, A ;
KIMURA, R ;
KONAGAI, M ;
TAKAHASHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L279-L281
[2]  
BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2
[3]   COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS [J].
DEAN, PJ .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02) :625-646
[4]   GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].
FISCHER, R ;
MASSELINK, WT ;
KLEM, J ;
HENDERSON, T ;
MCGLINN, TC ;
KLEIN, MV ;
MORKOC, H ;
MAZUR, JH ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381
[5]   HETEROEPITAXIAL GROWTH OF ZNSE ON SI(111) BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
LEE, MK ;
CHANG, JH ;
YEH, MY ;
LIN, YF .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :4241-4243
[6]   EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS [J].
MINO, N ;
KOBAYASHI, M ;
KONAGAI, M ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :793-796
[7]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON (100) SI [J].
PARK, RM ;
MAR, HA .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :529-531
[8]   LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF DEVICE QUALITY GAAS DIRECTLY ON (100) SI [J].
SHASTRY, SK ;
ZEMON, S .
APPLIED PHYSICS LETTERS, 1986, 49 (08) :467-469
[9]   ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J].
STUTIUS, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :656-658