HETEROEPITAXIAL GROWTH OF ZNSE ON SI(111) BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

LEE, MK

CHANG, JH

YEH, MY

LIN, YF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4241 / 4243

页数：3

共 9 条

[1] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].

BHARGAVA, RN .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26

[2]

BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2

[3] EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS [J].

MINO, N ;

KOBAYASHI, M ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :793-796

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON (100) SI [J].

PARK, RM ;

MAR, HA .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :529-531

[5] HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION [J].

SHIBATA, N ;

OHKI, A ;

ZEMBUTSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08) :1305-1309

[6] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J].

STUTIUS, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :656-658

[7] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD [J].

STUTIUS, W .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :95-109

[8] THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE [J].

WRIGHT, PJ ;

COCKAYNE, B .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :148-154

[9] GROWTH OF HIGH-QUALITY ZNSE FILMS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

YOSHIKAWA, A ;

TANAKA, K ;

YAMAGA, S ;

KASAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L424-L426

← 1 →