DOPANT MIGRATION IN SILICON DURING IMPLANTATION/ANNEALING MEASURED BY SCANNING TUNNELING MICROSCOPY

被引：13

作者：

HESSEL, HE ^{[1
]}

MEMMERT, U ^{[1
]}

CERVA, H ^{[1
]}

BEHM, RJ ^{[1
]}

机构：

[1] SIEMENS RES LABS,W-8000 MUNICH 83,GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.585533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spatial correlation between the lateral distribution of the doping type and the former implantation mask edge was investigated by scanning tunneling microscopy (STM) measurements. The position of the former mask edge was determined from surface steps resolved by STM topography measurements. Current imaging tunneling spectroscopy (CITS) data recorded simultaneously allowed to detect the transition from a high doping level with an ohmic I-V curve to a lower doping level displaying a Schottky barrier behavior. The influence of different annealing treatments on the position of this transition was investigated.

引用

页码：690 / 694

页数：5

共 23 条

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