DEFECT FORMATION IN SILICON AT A MASK EDGE DURING CRYSTALLIZATION OF AN AMORPHOUS IMPLANTATION LAYER

被引：46

作者：

CERVA, H

KUSTERS, KH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

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D O I：

10.1063/1.343832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4723 / 4728

页数：6

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