THE FORMATION, MORPHOLOGY, AND OPTICAL-PROPERTIES OF POROUS SILICON STRUCTURES

被引:121
作者
SEARSON, PC
MACAULAY, JM
PROKES, SM
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1149/1.2069080
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The recent demonstrations of visible light emission from porous silicon, both photoluminescence and electroluminescence, have caught the attention of the semiconductor research community. Such silicon-based light emitting devices have considerable potential in the opto-electronics industry. This article reviews the present understanding of the electrochemistry of pore formation, the structure, and the light emitting properties of porous silicon.
引用
收藏
页码:3373 / 3378
页数:6
相关论文
共 79 条
[1]   STAIN FILMS ON SILICON [J].
ARCHER, RJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :104-110
[2]   DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION [J].
BARLA, K ;
HERINO, R ;
BOMCHIL, G ;
PFISTER, JC ;
FREUND, A .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :727-732
[3]   X-RAY TOPOGRAPHIC CHARACTERIZATION OF POROUS SILICON LAYERS [J].
BARLA, K ;
BOMCHIL, G ;
HERINO, R ;
PFISTER, JC ;
BARUCHEL, J .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :721-726
[4]   MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].
BEALE, MIJ ;
CHEW, NG ;
UREN, MJ ;
CULLIS, AG ;
BENJAMIN, JD .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :86-88
[5]   AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636
[6]   THE FORMATION OF POROUS SILICON BY CHEMICAL STAIN ETCHES [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) :408-414
[7]   PORE-SIZE DISTRIBUTION IN POROUS SILICON STUDIED BY ADSORPTION-ISOTHERMS [J].
BOMCHIL, G ;
HERINO, R ;
BARLA, K ;
PFISTER, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1611-1614
[8]  
BOMCHIL G, 1985, 1985 P MAT RES SOC M, V4, P463
[9]   THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].
BRANDT, MS ;
FUCHS, HD ;
STUTZMANN, M ;
WEBER, J ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312
[10]   VISIBLE-LIGHT EMISSION FROM A POROUS SILICON SOLUTION DIODE [J].
BRESSERS, PMMC ;
KNAPEN, JWJ ;
MEULENKAMP, EA ;
KELLY, JJ .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :108-110