ANALYSIS OF THE SUPERHYPERFINE STRUCTURE AND THE G-TENSOR OF DEFECTS IN AMORPHOUS-SILICON

被引：20

作者：

STATHIS, JH

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.40.1232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：1232 / 1237

页数：6

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