DEFECT STATES IN AMORPHOUS-SILICON

被引:19
作者
ISHII, N [1 ]
KUMEDA, M [1 ]
SHIMIZU, T [1 ]
机构
[1] KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 116卷 / 01期
关键词
D O I
10.1002/pssb.2221160112
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:91 / 100
页数:10
相关论文
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