Dose rate and annealing effects on total dose response of MOS and bipolar circuits

被引：24

作者：

Carriere, T ^{[1
]}

Beaucour, J ^{[1
]}

Gach, A ^{[1
]}

Johlander, B ^{[1
]}

Adams, L ^{[1
]}

机构：

[1] EUROPEAN SPACE AGCY,ESTEC,2201 AZ NOORDWIJK,NETHERLANDS

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/23.488751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different part types of major technology families were irradiated in order to study dose rate and post irradiation annealing effects. Results confirm that degradation of MOS technologies at low dose rates call be predicted from high dose rate and annealing measurements, while this is not possible for bipolar linear IC's. The ESA/SCC22900 test method is discussed.

引用

页码：1567 / 1574

页数：8

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