A COMPARISON OF METHODS FOR SIMULATING LOW DOSE-RATE GAMMA-RAY TESTING OF MOS DEVICES

被引：11

作者：

JENKINS, WC ^{[1
]}

MARTIN, RL ^{[1
]}

机构：

[1] USN ACAD,DEPT EE,MS 14B,ANNAPOLIS,MD 21402

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A radiation testing procedure is presented and experimentally verified in which a series of high dose-rate irradiations, with 100-degrees-C annealing under bias between irradiations, is used to simulate a continuous low dose-rate irradiation. This approach can reduce low dose-rate testing time by as much as a factor of 100 with respect to actual low dose-rate irradiations. The procedure also provides detailed information on the behavior of CMOS parts at low dose-rates which are of interest to many satellite systems.

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页码：1560 / 1566

页数：7

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