A COMPARISON OF METHODS FOR TOTAL DOSE TESTING OF BULK CMOS AND CMOS SOS DEVICES

被引：12

作者：

BAZE, MP

PLAAG, RE

JOHNSTON, AH

机构：

[1] High Technology Center, Boeing Aerospace and Electronics, Seattle

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

CMOS/SOS Devices - Hole Trapping;

D O I：

10.1109/23.101195

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low and high dose rate testing results are compared for CMOS technologies. Low rate tests were done for time periods of more than one year to more closely approximate dose rates in space. Devices tested at high dose rate were annealed at room temperature for long times or at elevated temperature for short times. A temperature of 100°C was too low to anneal some devices. Differences between expected and actual results are identified and recommendations made for improving test procedures. © 1990 IEEE

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页码：1818 / 1824

页数：7

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