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DOSE DEPENDENCE OF INTERFACE TRAPS IN GATE OXIDES AT HIGH-LEVELS OF TOTAL DOSE

被引：16
作者：
BAZE, MP
PLAAG, RE
JOHNSTON, AH
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期
关键词：
D O I：
10.1109/23.45379
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1858 / 1864
页数：7
相关论文
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