THE ELECTRON-MOBILITY IN AMORPHOUS-SILICON UNDER DOUBLE INJECTION

被引：2

作者：

GOLDIE, D

LECOMBER, PG

SPEAR, WE

机构：

[1] Univ of Dundee, Dundee, Scot, Univ of Dundee, Dundee, Scot

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1988年 / 58卷 / 02期

关键词：

SEMICONDUCTOR DEVICES - Junctions - SEMICONDUCTOR MATERIALS - Charge Carriers;

D O I：

10.1080/09500838808214740

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The transport of a pulse of photogenerated excess electrons has been investigated in a-Si p** plus -i-n** plus junctions under forward bias in the presence of strong double injection. It is found that the electron drift mobility is completely independent of forward current densities of up to 0. 33 A cm** minus **2. The results disagree with previous work of Silver et al. , who observed an appreciable increase in electron mobility in the same range of current densities. It is suggested that the experimental disagreement arises from problems inherent in the voltage-step technique of mobility measurement used by these authors.

引用

页码：107 / 112

页数：6

共 10 条

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