RAMAN AND ION CHANNELING ANALYSIS OF DAMAGE IN ION-IMPLANTED GAAS - DEPENDENCE ON ION DOSE AND DOSE-RATE

被引:27
作者
DESNICA, UV
WAGNER, J
HAYNES, TE
HOLLAND, OW
机构
[1] OAK RIDGE NATL LAB, OAK RIDGE, TN 37831 USA
[2] FRAUNHOFER INST APPL SOLID STATE PHYS, W-7800 FREIBURG, GERMANY
关键词
D O I
10.1063/1.351077
中图分类号
O59 [应用物理学];
学科分类号
摘要
Raman scattering and ion channeling techniques were used to investigate the damage in GaAs implanted at room temperature with 100-keV Si+ ions. The ion-induced damage was analyzed for different ion doses and dose rates (current densities). The development of different damage components was monitored by comparing a Raman signal which is specific to amorphization in GaAs to ion channeling results which are sensitive to small-volume crystalline defects, as well as to amorphous regions. Raman analysis showed that the rate of growth of the amorphous fraction with implant dose was comparable to the growth rate of the total damage as determined by ion channeling. However, while Raman analysis indicated a weak dependence of damage on dose rate, the ion channeling results showed a substantially stronger dependence. These results demonstrate that the damage morphology in GaAs is dependent upon both dose and dose rate, and that the dose-rate-dependent component of the total damage consists primarily of crystalline defects.
引用
收藏
页码:2591 / 2595
页数:5
相关论文
共 12 条
[1]   PHONON SHIFTS IN ION BOMBARDED GAAS - RAMAN MEASUREMENTS [J].
BURNS, G ;
DACOL, FH ;
WIE, CR ;
BURSTEIN, E ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1987, 62 (07) :449-454
[2]   THE INFLUENCE OF DOSE-RATE AND ANALYSIS PROCEDURES ON MEASURED DAMAGE IN P+ ION-IMPLANTED GAAS [J].
CARTER, G ;
NOBES, MJ ;
TASHLYKOV, IS .
RADIATION EFFECTS LETTERS, 1984, 85 (01) :37-43
[3]  
EISEN FH, 1973, CHANNELING, P417
[4]   DOSE-RATE EFFECTS ON DAMAGE ACCUMULATION IN SI+-IMPLANTED GALLIUM-ARSENIDE [J].
HAYNES, TE ;
HOLLAND, OW .
APPLIED PHYSICS LETTERS, 1991, 58 (01) :62-64
[5]   COMPARATIVE-STUDY OF IMPLANTATION-INDUCED DAMAGE IN GAAS AND GE - TEMPERATURE AND FLUX DEPENDENCE [J].
HAYNES, TE ;
HOLLAND, OW .
APPLIED PHYSICS LETTERS, 1991, 59 (04) :452-454
[6]   DOSE-RATE EFFECTS ON DAMAGE FORMATION IN ION-IMPLANTED GALLIUM-ARSENIDE [J].
HAYNES, TE ;
HOLLAND, OW .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :1028-1031
[7]   SILICON IMPLANTATION INTO GAAS - OBSERVATIONS OF DOSE-RATE DEPENDENT ELECTRICAL ACTIVATION AND DAMAGE [J].
MOORE, FG ;
DIETRICH, HB ;
DOBISZ, EA ;
HOLLAND, OW .
APPLIED PHYSICS LETTERS, 1990, 57 (09) :911-913
[8]   RAMAN-SPECTRA FROM SI AND SN IMPLANTED GAAS [J].
NAKAMURA, T ;
KATODA, T .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5870-5872
[9]   HIGH-PURITY LEC GROWTH AND DIRECT IMPLANTATION OF GAAS FOR MONOLITHIC MICROWAVE CIRCUITS [J].
THOMAS, RN ;
HOBGOOD, HM ;
ELDRIDGE, GW ;
BARRETT, DL ;
BRAGGINS, TT ;
TA, LB ;
WANG, SK .
SEMICONDUCTORS AND SEMIMETALS, 1984, 20 :1-87
[10]   EFFECTS OF AS+ ION-IMPLANTATION ON THE RAMAN-SPECTRA OF GAAS - SPATIAL CORRELATION INTERPRETATION [J].
TIONG, KK ;
AMIRTHARAJ, PM ;
POLLAK, FH ;
ASPNES, DE .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :122-124