共 21 条
- [1] GERMANIUM INSULATED-GATE FIELD-EFFECT TRANSISTOR (FET) [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 316 - &
- [3] GREGORY OJ, 1985, ACS SYM SER, V290, P178
- [5] CONDUCTANCE OF AMORPHOUS-GERMANIUM NITRIDE FILMS IN HIGH ELECTRIC-FIELDS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (01): : 387 - 393
- [9] NAGAI H, 1974, REV ELEC COMMUN LAB, V22, P1043