REAL-TIME OPTICAL DIAGNOSTICS FOR EPITAXIAL-GROWTH

被引：62

作者：

ASPNES, DE

机构：

[1] Department of Physics, North Carolina State University, Raleigh

来源：

SURFACE SCIENCE | 1994年 / 307卷

关键词：

D O I：

10.1016/0039-6028(94)91533-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Various optical diagnostics are being developed to meet new challenges in epitaxial growth. Layer thicknesses and compositions, the primary parameters needed for growth control, can be obtained with bulk-oriented probes such as reflectometry and ellipsometry. New derivative algorithms for determining near-surface dielectric properties and compositions from kinetic ellipsometric and complex-reflectometric data have made possible closed-loop feedback control of alloy structures, including compositionally graded structures. New information about the kinetics and chemistry of growth is being obtained by surface-oriented probes such as laser light scattering (LLS), surface photoabsorption (SPA), and reflectance-difference (-anisotropy) spectroscopy (RDS/RAS). Examples are provided, and likely directions of further progress discussed.

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页码：1017 / 1027

页数：11

相关论文

共 81 条

[1] GROWTH OF III-V MATERIALS BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

ABERNATHY, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :869-875

[2] INSITU INVESTIGATION OF THE LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF LATTICE-MISMATCHED SEMICONDUCTORS USING REFLECTANCE ANISOTROPY MEASUREMENTS [J].

ACHER, O ;

KOCH, SM ;

OMNES, F ;

DEFOUR, M ;

RAZEGHI, M ;

DREVILLON, B .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3564-3577

[3] SPECTROSCOPIC ELLIPSOMETRY ON THE MILLISECOND TIME SCALE FOR REAL-TIME INVESTIGATIONS OF THIN-FILM AND SURFACE PHENOMENA [J].

AN, I ;

LI, YM ;

NGUYEN, HV ;

COLLINS, RW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (08) :3842-3848

[4] GA ADSORPTION ON SI(111) ANALYZED BY RHEED AND INSITU ELLIPSOMETRY [J].

ANDRIEU, S ;

DAVITAYA, FA .

JOURNAL OF CRYSTAL GROWTH, 1991, 112 (01) :146-152

[5] APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].

ASPNES, DE ;

QUINN, WE ;

GREGORY, S .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2569-2571

[6] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690

[7] ATOMIC LAYER EPITAXY ON (001) GAAS - REAL-TIME SPECTROSCOPY [J].

ASPNES, DE ;

KAMIYA, I ;

TANAKA, H ;

BHAT, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1725-1729

[8] GROWTH OF ALXGA1-XAS PARABOLIC QUANTUM-WELLS BY REAL-TIME FEEDBACK-CONTROL OF COMPOSITION [J].

ASPNES, DE ;

QUINN, WE ;

TAMARGO, MC ;

PUDENZI, MAA ;

SCHWARZ, SA ;

BRASIL, MJSP ;

NAHORY, RE ;

GREGORY, S .

APPLIED PHYSICS LETTERS, 1992, 60 (10) :1244-1246

[9] MINIMAL-DATA APPROACHES FOR DETERMINING OUTER-LAYER DIELECTRIC RESPONSES OF FILMS FROM KINETIC REFLECTOMETRIC AND ELLIPSOMETRIC MEASUREMENTS [J].

ASPNES, DE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1993, 10 (05) :974-983

[10] MOLECULAR-BEAM EPITAXY GROWTH OF VERTICAL CAVITY OPTICAL-DEVICES WITH INSITU CORRECTIONS [J].

BACHER, K ;

PEZESHKI, B ;

LORD, SM ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1992, 61 (12) :1387-1389

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