ELECTRON INTERSUBBAND ABSORPTION IN MODULATION AND WELL-DOPED SI/SI1-XGEX MULTIPLE QUANTUM-WELLS

被引：8

作者：

HERTLE, H ^{[1
]}

SCHAFFLER, F ^{[1
]}

ZRENNER, A ^{[1
]}

ABSTREITER, G ^{[1
]}

GORNIK, E ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR,W-7900 ULM,GERMANY

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90029-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intersubband absorption in the conduction band of strain-symmetrized Si/Si1-xGex multiple quantum wells has been measured. Modulation- and well-doped samples with different well widths and carrier concentrations are studied in a temperature range from 8 K to room temperature. In good agreement with self-consistent subband calculations the observed absorption lines are attributed to intersubband transitions from the ground to the first excited state or from the first excited to the second excited state.

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页码：20 / 23

页数：4

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