TRANSITION-CAPACITANCE CALCULATIONS FOR DOUBLE-DIFFUSED P-N-JUNCTIONS

被引：10

作者：

BHATTACHARYYA, AB ^{[1
]}

BASAVARAJ, TN ^{[1
]}

机构：

[1] INDIAN INST TECHNOL, DEPT PHYS, NEW DELHI 29, INDIA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90184-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：467 / 476

页数：10

共 31 条

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