IDENTIFICATION OF SMALL DEFECTS IN SILICON

被引：11

作者：

PASEMANN, M

WERNER, P

机构：

[1] Institut Für Festkörperphysik Und Elektronenmikroskopie, Akademie Der Wissenschaften Der Ddr

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 54卷 / 01期

关键词：

D O I：

10.1002/pssa.2210540123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In silicon monocrystals grown both by Czochralski and zone‐floating method small defects (diameter about 100 Å) in surface‐near layers, with typical black‐white contrast in the dynamical image in the transmission electron microscope are observed. The identification is carried out by means of diffraction contrast analysis and high resolution lattice plane imaging. According to this analysis the defects are found to be spherical amorphous particles which compress the silicon matrix due to an internal strain ε ≈ 0.03 to 0.04. Three possibilities of the structure of these interstitial type clusters are discussed. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

收藏

页码：179 / 188

页数：10

相关论文

共 21 条

[1] DIFFRACTION CONTRAST FROM SPHERICALLY SYMMETRICAL COHERENCY STRAINS [J].

ASHBY, MF ;

BROWN, LM .

PHILOSOPHICAL MAGAZINE, 1963, 8 (91) :1083-&

[2] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON [J].

BERNEWITZ, LI ;

KOLBESEN, BO ;

MAYER, KR ;

SCHUH, GE .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :277-279

[3] DIE INTERPRETATION DES ELEKTRONENMIKROSKOPISCHEN BEUGUNSKONTRASTES VON EINSCHLUSSEN NAHE EINER KRAFTEFREIEN FOLIENOBERFLACHE [J].

CHIK, KP ;

WILKENS, M ;

RUHLE, M .

PHYSICA STATUS SOLIDI, 1967, 23 (01) :113-&

[4] MELTING OF SILICON-CRYSTALS AND A POSSIBLE ORIGIN OF SWIRL DEFECTS [J].

CHIKAWA, J ;

SHIRAI, S .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :328-340

[5] NACHWEIS UND ENTSTEHUNG VON ZWISCHENGITTERATOM-AGGLOMERATEN IN IONENBESTRAHLTEN KUPFERFOLIEN [J].

DIEPERS, H ;

DIEHL, J .

PHYSICA STATUS SOLIDI, 1966, 16 (02) :K109-&

[6]

ESHELBY JD, 1961, PROGR SOLID MECH, V2, P96

[7] FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS [J].

FOLL, H ;

GOSELE, U ;

KOLBESEN, BO .

JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :90-108

[8] FORMATION AND NATURE OF SWIRL DEFECTS IN SILICON [J].

FOLL, H ;

KOLBESEN, BO .

APPLIED PHYSICS, 1975, 8 (04) :319-331

[9] ELASTIC-MODULI OF RANDOM NETWORK MODELS OF AMORPHOUS-GE AND SI [J].

GUTTMAN, L .

SOLID STATE COMMUNICATIONS, 1977, 24 (03) :211-212

[10] FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS [J].

KOCK, AJRD ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) :125-137