THERMAL EMISSION RATES AND CAPTURE CROSS-SECTIONS OF MAJORITY CARRIERS AT VANADIUM CENTERS IN SILICON

被引：15

作者：

OHTA, E

SAKATA, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 07期

关键词：

D O I：

10.1016/0038-1101(80)90134-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：759 / 764

页数：6

共 31 条

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