SUPPRESSION OF BE DIFFUSION IN MOLECULAR-BEAM EPITAXY ALGAAS BY THE INCORPORATION OF IN FOR HETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATIONS

被引：6

作者：

FUJII, T

TOMIOKA, T

ISHIKAWA, H

SASA, S

ENDOH, A

BAMBA, Y

ISHII, K

KATAOKA, Y

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：154 / 156

页数：3

共 6 条

[1] HEAVILY SI-DOPED INGAAS LATTICE-MATCHED TO INP GROWN BY MBE [J].

FUJII, T ;

INATA, T ;

ISHII, K ;

HIYAMIZU, S .

ELECTRONICS LETTERS, 1986, 22 (04) :191-192

[2] GAAS/IN0.08GA0.92AS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A LATTICE-MISMATCHED BASE [J].

ITO, H ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (05) :L421-L424

[3] GA0.72AL0.28AS/GA0.99BE0.01AS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY [J].

LIEVIN, JL ;

DUBONCHEVALLIER, C ;

ALEXANDRE, F ;

LEROUX, G ;

DANGLA, J ;

ANKRI, D .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :129-131

[4] CONTROL OF BE DIFFUSION IN MOLECULAR-BEAM EPITAXY GAAS [J].

MILLER, JN ;

COLLINS, DM ;

MOLL, NJ .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :960-962

[5] SURFACE EFFECT-INDUCED FAST BE DIFFUSION IN HEAVILY DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PAO, YC ;

HIERL, T ;

COOPER, T .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :201-204

[6] ALGAAS INGAAS GAAS STRAINED-LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J].

SULLIVAN, GJ ;

ASBECK, PM ;

CHANG, MF ;

MILLER, DL ;

WANG, KC .

ELECTRONICS LETTERS, 1986, 22 (08) :419-421

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