AN STM STUDY OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS

被引：60

作者：

SUDIJONO, J

JOHNSON, MD

ELOWITZ, MB

SNYDER, CW

ORR, BG

机构：

[1] H.M. Randall Laboratory, University of Michigan, Ann Arbor

来源：

SURFACE SCIENCE | 1993年 / 280卷 / 03期

关键词：

D O I：

10.1016/0039-6028(93)90678-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling microscopy has been used to investigate molecular-beam epitaxy growth of GaAs. By quenching the sample during deposition, we have imaged the GaAs(001) surface as it appeared during growth. Large scale images of the surface have been obtained at coverages varying from 0.25 to 1500 layers.

引用

收藏

页码：247 / 257

页数：11

相关论文

共 13 条

[1] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].

CLARKE, S ;

VVEDENSKY, DD .

PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238

[2]

HELLER G, 1992, APPL PHYS LETT, V60, P2675

[3] DIRECT OBSERVATION OF THE GROWTH-INTERRUPTION EFFECT FOR MOLECULAR-BEAM-EPITAXY GROWTH ON GAAS(001) BY SCANNING TUNNELING MICROSCOPY [J].

IDE, T ;

YAMASHITA, A ;

MIZUTANI, T .

PHYSICAL REVIEW B, 1992, 46 (03) :1905-1908

[4]

JOHNSON MS, IN PRESS

[5] SCALING ANALYSIS OF SURFACE-ROUGHNESS AND BRAGG OSCILLATION DECAY IN MODELS FOR LOW-TEMPERATURE EPITAXIAL-GROWTH [J].

KANG, HC ;

EVANS, JW .

SURFACE SCIENCE, 1992, 271 (1-2) :321-330

[6]

LARSEN PK, 1988, NATO ASI SERIES B, V188

[7] BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXY [J].

LIU, DG ;

LEE, CP ;

CHANG, KH ;

WU, JS ;

LIOU, DC .

APPLIED PHYSICS LETTERS, 1990, 57 (14) :1392-1394

[8] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

[9]

ORR BG, 1991, REV SCI INSTRUM, V6, P1400

[10] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].

PASHLEY, MD ;

HABERERN, KW ;

FRIDAY, W ;

WOODALL, JM ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179