RING-SHAPED STACKING-FAULTS INDUCED BY OXIDE PRECIPITATES IN SILICON

被引：19

作者：

PLOUGONVEN, C

LEROY, B

ARHAN, J

LECUILLER, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2711 / 2716

页数：6

共 16 条

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[7]

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[8] IMPURITY CLUSTERING EFFECTS ON ANOMALOUS TRANSMISSION OF X RAY IN SILICON [J].

PATEL, JR ;

BATTERMAN, BW .

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[9] X-RAY ANOMALOUS TRANSMISSION AND TOPOGRAPHY OF IMPURITY CLUSTERING IN PERFECT CRYSTALS [J].

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