POWER-FREQUENCY CHARACTERISTICS OF TRAPATT DIODE MODE OF HIGH EFFICIENCY POWER GENERATION IN GERMANIUM AND SILICON AVALANCHE DIODES

被引：17

作者：

SCHARFET.DL

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1970年 / 49卷 / 05期

关键词：

D O I：

10.1002/j.1538-7305.1970.tb01802.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：799 / +

页数：1

共 18 条

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[3]

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[6]

DUNN CN, UNPUBLISHED WORK

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EVANS, WJ .

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[8]

EVANS WJ, 1970, IEEE, VGE17

[9] HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J].

JOHNSTON, RL ;

SCHARFET.DL ;

BARTELIN.DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1611-+

[10] LOW-FREQUENCY HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM IMPATT DIODES [J].

JOHNSTON, RL ;

SCHARFETTER, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) :905-+

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