SPACE-CHARGE-LIMITED CURRENT INSTABILITIES IN N+-PI-N+ SILICON DIODES

被引：6

作者：

HAGENLOCHER, AK

CHEN, WT

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1969年 / 13卷 / 05期

关键词：

D O I：

10.1147/rd.135.0533

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Measurements of instability in nickel-doped 25,000 ohm- cm silicon when strength of pulsed electric field is varied above and below threshold; at threshold nickel centers becom ionized, and positive space charge is created in center of sample; this nonequilibrium distribution, which persists for period of 200 to 300 mu sec, has properties similar to those of gaseous plasma.

引用

页码：533 / +

页数：1

共 20 条

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