NONCONTACT MOBILITY MEASUREMENTS WITH A LASER MICROWAVE PHOTOCONDUCTANCE TECHNIQUE - TEMPERATURE-DEPENDENCE

Minority carrier conductance mobility was measured in a noncontact fashion using a laser excitation/microwave reflection photoconductance technique. The mobility was obtained from the surface component of recombination lifetime via measurements of effective lifetime on sample pairs which consist of an oxidized wafer, which is subsequently damaged by lapping, or two lapped wafers with different thicknesses. The experimental temperature dependence of mobility was compared with theoretical predictions given by semiempirical formulas. A good agreement between experimental data and theoretical calculations for both measurement algorithms and n- and p-type conductivity silicon material was obtained.