TEMPERATURE RESOLVED PHOTOLUMINESCENCE INVESTIGATIONS ON INGAAS/INP MQWS

被引：8

作者：

SCHWEDLER, R

REINHARDT, F

GRUTZMACHER, D

WOLTER, K

机构：

[1] Institute of Semiconductor Electronics, RWTH Aachen, D-5100 Aachen

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90516-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaAs/InP quantum well structures grown by low pressure metalorganic vapor phase epitaxy with well widths down to one monolayer are investigated by photoluminescence spectra taken at different temperatures. The photoluminescence spectra show clearly resolved doublets. Anomalous peak shifts are observed as the well width is reduced to one monolayer. Details of growth induced interface morphologies are deduced from the temperature resolved photoluminescence spectra. Qualitative analysis of the monolayer islands' distribution and relative sizes is performed.

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页码：531 / 536

页数：6

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