LOW THRESHOLD CURRENT CW OPERATION OF INP-GAINAS BURIED HETEROSTRUCTURE LASERS

被引：6

作者：

NOGUCHI, Y

TAKAHEI, K

SUZUKI, Y

NAGAI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 12期

关键词：

D O I：

10.1143/JJAP.19.L759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L759 / L762

页数：4

共 11 条

[1] ROOM-TEMPERATURE CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS EMITTING AT 1-56 MU-M [J].

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y ;

YAMAMOTO, T .

ELECTRONICS LETTERS, 1979, 15 (19) :606-607

[2] IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE [J].

AKIBA, S ;

SAKAI, K ;

YAMAMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) :1899-1900

[3] 1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE [J].

ARAI, S ;

SUEMATSU, Y ;

ITAYA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) :709-710

[4] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DH LASER EMITTING AT 1.51 MU-M [J].

ARAI, S ;

ASADA, M ;

SUEMATSU, Y ;

ITAYA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2333-2334

[5]

HSIEH JJ, 1980, TECH DIG INTEGRATED, pPD1

[6] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M [J].

KAWAGUCHI, H ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

NAGAI, H ;

IWANE, G .

ELECTRONICS LETTERS, 1979, 15 (21) :669-670

[7] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J].

MILLER, BI ;

MCFEE, JH ;

MARTIN, RJ ;

TIEN, PK .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :44-47

[8]

NUESE CJ, 1978, IEEE T ELECTRON DEV, V24, P1213

[9] 1.5-1.7 MU-M VPE INGAASP-INP CW LASERS [J].

OLSEN, GH ;

ZAMEROWSKI, TJ ;

DIGIUSEPPE, NJ .

ELECTRONICS LETTERS, 1980, 16 (13) :516-518

[10] GROWTH OF IN0.53GA0.47AS ON (100)-ORIENTED INP FROM SUPERCOOLED SOLUTION [J].

SAKAI, K ;

MATSUSHIMA, Y ;

AKIBA, S ;

YAMAMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) :1009-1010

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