ON THE FLOW REGIMES IN VPE REACTORS

被引:38
作者
MAKAROV, YN
ZHMAKIN, AI
机构
[1] Acad of Sciences of the USSR, Russia
关键词
30;
D O I
10.1016/0022-0248(89)90032-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:537 / 550
页数:14
相关论文
共 30 条
[11]  
MEYER JE, 1961, NUCL SCI ENG, V10, P267
[12]   ALGAAS GROWTH USING TRIMETHYL AND TRIETHYL COMPOUND SOURCES [J].
MIZUTA, M ;
IWAMOTO, T ;
MORIYAMA, F ;
KAWATA, S ;
KUKIMOTO, H .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :142-147
[13]   COMPLEX FLOW PHENOMENA IN MOCVD REACTORS .1. HORIZONTAL REACTORS [J].
MOFFAT, H ;
JENSEN, KF .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :108-119
[14]   ON THE REACTION-MECHANISM OF GAAS MOCVD [J].
NISHIZAWA, J ;
KURABAYASHI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :413-417
[15]   UNIFORM EPITAXIAL-GROWTH OF MODULATION-DOPED GAAS/GA0.7AL0.3AS ON 3-INCH SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
OKAMOTO, A ;
TERAO, H ;
KAMEJIMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (02) :238-241
[16]   FLUID-MECHANICS IN CRYSTAL-GROWTH - THE 1982 FREEMAN SCHOLAR LECTURE [J].
OSTRACH, S .
JOURNAL OF FLUIDS ENGINEERING-TRANSACTIONS OF THE ASME, 1983, 105 (01) :5-20
[17]   NUMERICAL TECHNIQUE FOR LOW-SPEED HOMOGENEOUS 2-PHASE FLOW WITH SHARP INTERFACES [J].
RAMSHAW, JD ;
TRAPP, JA .
JOURNAL OF COMPUTATIONAL PHYSICS, 1976, 21 (04) :438-453
[18]   DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J].
REEP, DH ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :675-680
[19]   EQUATIONS OF MOTION FOR THERMALLY DRIVEN, BUOYANT FLOWS [J].
REHM, RG ;
BAUM, HR .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1978, 83 (03) :297-308
[20]  
Reid R.C., 1977, PROPERTIES GASES LIQ, V3rd