INFRARED-ABSORPTION STUDY OF LI-DIFFUSED MG-DOPED GAAS

被引:13
作者
LEUNG, PC
ALLRED, WP
SPITZER, WG
SKOLNIK, LH
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10.1063/1.1660879
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O59 [应用物理学];
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页码:4096 / &
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[1]  
ALLRED WP, 1968, 2ND INT C GALL ARS D, P66
[2]   A STUDY OF VIBRATIONS OF BORON AND PHOSPHORUS IN SILICON BY INFRA-RED ABSORPTION [J].
ANGRESS, JF ;
GOODWIN, AR ;
SMITH, SD .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 287 (1408) :64-&
[4]   THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J].
DAWBER, PG ;
ELLIOTT, RJ .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521) :453-&
[5]   THEORY OF VIBRATIONS OF PAIRS OF DEFECTS IN SILICON [J].
ELLIOTT, RJ ;
PFEUTY, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (09) :1789-&
[6]   HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J].
ERMANIS, F ;
WOLFSTIR.K .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :1963-&
[7]   HALL EFFECT INVESTIGATION ON LITHIUM-DIFFUSED GALLIUM ARSENIDE [J].
FULLER, CS ;
ALLISON, HW .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1227-&
[8]   DEFECTS IN GAAS PRODUCED BY LITHIUM [J].
FULLER, CS ;
WOLFSTIRN, KB .
APPLIED PHYSICS LETTERS, 1963, 2 (03) :45-47
[9]   DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF LI IN GAAS SINGLE CRYSTALS [J].
FULLER, CS ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2507-&
[10]   ACCEPTORS IN DONOR-DOPED GAAS RESULTING FROM LI DIFFUSION [J].
FULLER, CS ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) :1914-&