HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF DEFECT STRUCTURES PRODUCED BY HIGH DC ELECTRIC-FIELDS IN SILICON SINGLE-CRYSTALS

被引：13

作者：

LAL, K

GOSWAMI, SNN

机构：

[1] Natl Physical Lab, New Delhi, India, Natl Physical Lab, New Delhi, India

来源：

MATERIALS SCIENCE AND ENGINEERING | 1987年 / 85卷 / 1-2期

关键词：

The financial support received from the Department of Science and Technology for partial support of this research is acknowledged with thanks;

D O I：

10.1016/0025-5416(87)90476-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：147 / 156

页数：10

共 22 条

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