DEFECTS IN MOLECULAR-BEAM EPITAXY GROWN GAALAS LAYERS

被引：5

作者：

FENG, SL

ZAZOUI, M

BOURGOIN, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 01期

关键词：

D O I：

10.1063/1.101756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 69

页数：2

共 10 条

[1] PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

KAMADA, M ;

TAIRA, K ;

ARAI, M ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2833-2836

[2] POINT-DEFECTS IN GAAS-GA1-XALXAS SUPERLATTICES [J].

FENG, SL ;

BOURGOIN, JC ;

MAUGER, A ;

STIEVENARD, D ;

BARBIER, E ;

HIRTZ, JP ;

CHOMETTE, A .

PHYSICAL REVIEW B, 1989, 39 (18) :13252-13263

[3] THE EFFECT OF SUBSTRATE GROWTH TEMPERATURE ON DEEP LEVELS IN NORMAL-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MCAFEE, SR ;

TSANG, WT ;

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6165-6167

[4] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

DRUMMOND, TJ ;

KOPP, W ;

FISCHER, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :824-826

[5] TRENDS OF DEEP LEVEL ELECTRON TRAPS IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PUECHNER, RA ;

JOHNSON, DA ;

MARACAS, GN .

APPLIED PHYSICS LETTERS, 1988, 53 (20) :1952-1954

[6] TRANSIENT CAPACITANCE SPECTROSCOPY IN HEAVILY COMPENSATED SEMICONDUCTORS [J].

STIEVENARD, D ;

LANNOO, M ;

BOURGOIN, JC .

SOLID-STATE ELECTRONICS, 1985, 28 (05) :485-492

[7] EFFECT OF GROWTH TEMPERATURE ON THE PHOTO-LUMINESCENT SPECTRA FROM SN-DOPED GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SWAMINATHAN, V ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :347-349

[8] THE EFFECT OF AS-GA FLUX RATIO ON THE PHOTO-LUMINESCENT SPECTRA FROM MOLECULAR-BEAM EPITAXIALLY-GROWN SN-DOPED ALXGA1-XAS [J].

TSANG, WT ;

SWAMINATHAN, V .

APPLIED PHYSICS LETTERS, 1981, 39 (06) :486-487

[9] PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WICKS, G ;

WANG, WI ;

WOOD, CEC ;

EASTMAN, LF ;

RATHBUN, L .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5792-5796

[10] INFLUENCE OF GROWTH-CONDITIONS AND ALLOY COMPOSITION ON DEEP ELECTRON TRAPS ON N-ALXGA1-XAS GROWN BY MBE [J].

YAMANAKA, K ;

NARITSUKA, S ;

MANNOH, M ;

YUASA, T ;

NOMURA, Y ;

MIHARA, M ;

ISHII, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :229-232

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