NATIVE ACCEPTOR LEVELS IN GA-RICH GAAS

被引:47
作者
BUGAJSKI, M
KO, KH
LAGOWSKI, J
GATOS, HC
机构
关键词
D O I
10.1063/1.343114
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:596 / 599
页数:4
相关论文
共 19 条
[1]  
BARAFF GA, 1986, PHYS REV B, V33, P7340
[2]  
Bishop S. G., 1984, Semi-Insulating III-V materials, P302
[3]   PHOTOLUMINESCENCE AND INFRARED-SPECTROSCOPY OF ACCEPTORS IN GAAS [J].
BISHOP, SG ;
SHANABROOK, BV ;
MOORE, WJ .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1785-1790
[5]   INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J].
ELLIOTT, KR ;
HOLMES, DE ;
CHEN, RT ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :898-901
[6]   RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J].
ELLIOTT, KR .
APPLIED PHYSICS LETTERS, 1983, 42 (03) :274-276
[7]   INFRARED-ABSORPTION AND PHOTOLUMINESCENCE OF DEFECT LEVELS IN THE 204-MEV TO 255-MEV RANGE IN P-TYPE GAAS [J].
FISCHER, DW ;
YU, PW .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :1952-1955
[8]  
Holmes D. E., 1982, IEEE T ELECTRON DEV, V29, P1045
[9]   INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J].
LAGOWSKI, J ;
GATOS, HC ;
KANG, CH ;
SKOWRONSKI, M ;
KO, KY ;
LIN, DG .
APPLIED PHYSICS LETTERS, 1986, 49 (14) :892-894
[10]   CHARACTERIZATION OF THE INTRINSIC DOUBLE ACCEPTOR IN UNDOPED P-TYPE GALLIUM-ARSENIDE [J].
MITCHEL, WC ;
BROWN, GJ ;
FISCHER, DW ;
YU, PW ;
LANG, JE .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2320-2328