DIFFUSION OF BORON IN SILICON DURING O2/NF3 OXIDATION

The authors report the oxidation retarded diffusion (ORD) of boron under oxidation with small (ppm) additions of fluorine. It is well known that the diffusion of boron is enhanced during dry oxidation. In this study, we show that the diffusion of boron is retarded during oxidation with a small (ppm) additions of fluorine. It is shown that boron diffusion is enhanced by the injection of self-interstitials even if the concentration of vacancies remains equilibrated or undersaturated. Thus, reversing the point defect concentration by the use of O//2/NF//3 oxidation results in the reverse effect on boron diffusion, namely the retardation of the diffusion front relative to the control area.