ANALYSIS OF THE EFFECTS OF CONSTANT-CURRENT FOWLER-NORDHEIM-TUNNELING INJECTION WITH CHARGE TRAPPING INSIDE THE POTENTIAL BARRIER

Charge trapping and the generation of interface traps in thermally grown SiO2 and its interface with silicon, produced by Fowler-Nordheim tunneling injection at low temperatures from highly doped Si substrates, have been investigated. The results that can be obtained with the constant-current-injection method, when a moderate amount of charge is trapped inside the potential barrier, have been analyzed. This has afforded information about the position of the charge trapped in the oxide. No increase in the interface-trap density has been produced immediately after injection at 77 K, but, as the temperature is raised after injection, the growing of a peak of interface states has been observed. This phenomenon had been reported to be produced as a consequence of a previous hole trapping but, in this case, this intermediate stage of positive-charge building has not been observed. This effect is discussed, taking into account published models.