THE FREQUENCY BEHAVIOR OF INGAAS ALINAS METAL-SEMICONDUCTOR METAL PHOTODETECTORS AT LOW BIAS VOLTAGES FOR DATA COMMUNICATION APPLICATIONS

被引:12
作者
BURROUGHES, JH [1 ]
MILSHTEIN, MS [1 ]
PETTIT, GD [1 ]
PAKDAMAN, N [1 ]
HEINRICH, H [1 ]
WOODALL, JM [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1109/68.122349
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. We demonstrate multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are a viable candidate for long wavelength data communication applications.
引用
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页码:163 / 166
页数:4
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